FQD4P25TM-WS
Manufacturer:
On Semiconductor
Mfr.Part #:
FQD4P25TM-WS
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT P-Channel number of channels:1 45 W 250 V Continuous Drain Current (ID):3.1 A 14 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 2.1 Ω |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Weight | 0.2604 g |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 45 W |
| Number of Channels | 1 |
| Input capacitance | 420 pF |
| Continuous Drain Current (ID) | 3.1 A |
| Rds On Max | 2.1 Ω |
| Drain to Source Voltage (Vdss) | 250 V |
| Turn-On Delay Time | 9.5 ns |
| Turn-Off Delay Time | 14 ns |
| Element Configuration | Single |
| Fall Time | 27 ns |
| Rise Time | 60 ns |
| Gate Charge | 14 nC |
| Drain to Source Resistance | 2.1 Ω |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 250 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Gate to Source Threshold Voltage | 5 V |
| Drain to Source Breakdown Voltage | -250 V |
| FET Type(Transistor Polarity) | P-Channel |
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